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Method of programming and verifying cells of a nonvolatile memory and relative NAND FLASH memory
Method of programming and verifying cells of a nonvolatile memory and relative NAND FLASH memory
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机译:编程和验证非易失性存储器和相关的NAND FLASH存储器的单元的方法
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摘要
A method of programming cells in a nonvolatile memory is based upon a Global Verify operation and a Byte-by-byte Verify operation. The cells of a destination page of the nonvolatile memory are programmed, and logic values stored in the programmed cells of a source page of the same memory are verified that they have been correctly copied into corresponding cells of the destination page. The method carries out the fast but inadequate-at-times Global Verify operation, and if the Global Verify operation fails for a certain number of attempts, the Byte-by-byte Verify operation is carried out, which is slower but accurate.
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