首页>
外国专利>
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
展开▼
机译:产生用于MOSFET沟道迁移率修改的局部机械栅极应力的结构和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.
展开▼