a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different from metal M1, the M1 metal oxide nanocrystals being dispersed within this layer;b) the reduction of the M1 and M2 metal oxide nanocrystals into corresponding metal nanocrystals; andc) the selective growth of the M1 metal nanocrystals.;The invention also relates to a process for growing nanorods of a carbide of one metal M1 on a substrate from nanocrystals of this metal, to the substrates thus obtained and to their applications: fabrication of Microsystems provided with chemical or biological functionalities, in particular the fabrication of biosensors; electron emission sources, for example for flat television or computer screens; etc."/> Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof
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Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof

机译:在基底上由金属碳化物合成和生长纳米棒的方法,由此获得的基底及其应用

摘要

The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises:a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different from metal M1, the M1 metal oxide nanocrystals being dispersed within this layer;b) the reduction of the M1 and M2 metal oxide nanocrystals into corresponding metal nanocrystals; andc) the selective growth of the M1 metal nanocrystals.;The invention also relates to a process for growing nanorods of a carbide of one metal M1 on a substrate from nanocrystals of this metal, to the substrates thus obtained and to their applications: fabrication of Microsystems provided with chemical or biological functionalities, in particular the fabrication of biosensors; electron emission sources, for example for flat television or computer screens; etc.
机译:本发明涉及一种在基材上合成一种金属M 1 的碳化物纳米棒的方法,该方法包括: a)在基底上沉积一层金属M 1 的氧化物的纳米晶体和至少一种金属M 2 与金属M 1 不同,M 1 金属氧化物纳米晶体分散在该层中; b)将M 1 和M 2 金属氧化物纳米晶体还原成相应的金属纳米晶体;和 c)M 1 金属纳米晶体的选择性生长。 ;本发明还涉及一种在该基材上从该金属的纳米晶体生长一种金属M 1 的碳化物的纳米棒的方法,涉及由此获得的基材及其应用:具有化学或生物学功能的微系统的制造,特别是生物传感器的制造;电子发射源,例如用于平板电视或计算机屏幕的电子发射源;等等

著录项

  • 公开/公告号US7338554B2

    专利类型

  • 公开/公告日2008-03-04

    原文格式PDF

  • 申请/专利权人 MARC DELAUNAY;FRANCOISE VINET;

    申请/专利号US20050532500

  • 发明设计人 MARC DELAUNAY;FRANCOISE VINET;

    申请日2003-12-04

  • 分类号C30B1/02;

  • 国家 US

  • 入库时间 2022-08-21 20:09:09

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