首页> 外国专利> A PROCESS FOR THE PREPARATION OF AN IMPROVED THICK FILM RESISTOR USEFUL FOR MAKING STRAIN GAUGE WITH ENHANCED GAUGE FATOR UPTO 1000

A PROCESS FOR THE PREPARATION OF AN IMPROVED THICK FILM RESISTOR USEFUL FOR MAKING STRAIN GAUGE WITH ENHANCED GAUGE FATOR UPTO 1000

机译:改进的厚膜电阻器的制备过程,该电阻器可用于使用最大至1000的增强型量规来制作应变仪

摘要

A process for the preparation of an improved thick film resistor useful for making strain gauge with enhanced gauge factor upto 1000, which comprises: a] cleaning and insulating substrate [1] capable of withstanding high temperature by known methods; b] coating the said cleaned substrate by known method with a known non-corrosive conductor thick film [2] of thickness about 10 to 20 microns; drying the coated substrate [1,2] at temperature in the range of 60 to 120°C for 15 minutes; c] coating by known method the thus prepared substrate [1,2] with a known resistor thick film [3] of thickness of about 15 to 20 microns, drying the coated substrate [1, 2, 3] at temperature in the range of 60 to120°C for about 10 to15 minutes; d] coating by known method the resistor thick film [3] with cyanometallic compound [4] of thickness in the range of 10 to 25 microns; drying the coated substrate [1, 2, 3, 4] at temperature in the range of 60 to120°C for about 10 minutes; e] firing the thus prepared substrate [1, 2, 3, 4] to a temperature in the range of 800 to 900°C for a period ranging 10 to 20 minutes to obtain an improved thick film resistor useful for making strain gauge with enhanced gauge factor upto 1000.
机译:一种制备改进的厚膜电阻器的方法,该电阻器可用于制造应变系数高达1000的应变计,该方法包括:a)通过已知方法清洁和绝缘能够承受高温的基板[1]; b]通过已知方法用厚度约为10至20微米的已知非腐蚀导体厚膜[2]涂覆所述清洁的基板;在60至120℃的温度下将涂覆的基材[1,2]干燥15分钟; c]用已知方法涂覆这样制备的基底[1,2],用已知的电阻器厚膜[3],其厚度约为15至20微米,并在温度范围内干燥涂覆的基底[1,2,3]。 60至120°C约10至15分钟; d]通过已知方法用厚度在10至25微米范围内的氰基金属化合物[4]涂覆电阻器厚膜[3];在60至120℃的温度下干燥涂覆的基材[1、2、3、4]约10分钟; e]将如此制备的基板[1、2、3、4]在800至900℃的温度下烧制10至20分钟,以获得改进的厚膜电阻器,该电阻器可用于制造具有增强的应变仪。规格系数高达1000。

著录项

  • 公开/公告号IN215172B

    专利类型

  • 公开/公告日2008-03-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN1108/DEL/1998

  • 发明设计人 DR. AWATAR SINGH SCIENTIST;

    申请日1998-04-27

  • 分类号H01C7;

  • 国家 IN

  • 入库时间 2022-08-21 20:07:14

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