METHOD FOR MANUFACTURING ACTIVE ELEMENTS HAVING p-n OR n-p BARRIERS BASED ON InAs-InGaAs

摘要

A method for manufacturing active elements having -n- or n-p- barriers based on InAs-nGaAs includes preparation of saturated solution-melt from indium-gallium-arsenic, setting it in contact with front face of an indium arsenide packing, forced cooling a system, formation of -n- or n-p- barriers. Preparation of saturated solution-melt of the same composition is fulfilled at the same time on two packing made of indium arsenide of different type of conductivity. One solution-melt is unalloyed and an auxiliary one, another solution-melt is alloyed and being a process solution. Formation of an active element with -n- or n-p- barriers is realized on one of packing, which contacts with the process solution.