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Plant for electron-beam zone refining of material in space UNDER conditions of microgravity and space vacuum

机译:在微重力和空间真空条件下用于空间电子束精炼的设备

摘要

The invention relates to nonferrous metallurgy, in particular - to the construction of a plant for electron-beam zone refining of material in space in the conditions of microgravity and space vacuum. The plant consists of the growing vacuum vessel, which has a vacuum-sealed body with the cooled cylinder walls, light ports and lid, electron-beam heater with a heat-insulating screen, carriers of the sample, drive of its moving, carriers of material sample, nipple for pumping of gaseous atmosphere from the mentioned vessel, high-voltage block of electric power supply and high voltage wire which are inclosed in a spiral. In the mentioned plant the growing vacuum vessel is separated from the drive of vertical displacement of electron-beam heater and auxiliary drive material sample rotation and high-tension block of electric power supply by vacuum-sealed bedplate. On the high-tension block of power supply at the values of current loading of IA=3-5 mA alternating voltage decreased in amplitude is automatically supplied from the inventery block of power supply which carries out limitation of current in a circuit of anode-cathode of electron-beam heater. The plant is also equipped with a video camera and source of reference radiation, located before the light ports. The invention provides increasing in quality of single-crystals produced by zone melting from semiconductor materials and sintered composition materials, decision of technological capabilities of the plant, increasing of efficiency coefficient and safety of zone melting process of materials on board of the space station.
机译:本发明涉及有色冶金,特别是涉及在微重力和空间真空条件下对空间中的电子束区域进行材料精制的设备的构造。该工厂由成长中的真空容器组成,该容器具有带冷气瓶壁,光口和盖的真空密封主体,带隔热屏的电子束加热器,样品载体,运动驱动器,材料样本,用于从上述容器中抽出气态气氛的管接头,高压电源模块和高压导线,它们呈螺旋状封闭。在提到的工厂中,成长中的真空容器与电子束加热器的垂直位移驱动和辅助驱动材料样品旋转以及通过真空密封底座进行的高压电源分离。在IA = 3-5 mA的电流负载值的高压电源模块上,从电源库存模块自动提供振幅降低的交流电压,该电源模块在阳极-阴极电路中执行电流限制电子束加热器。该工厂还配备了摄像机和参考辐射源,位于光端口之前。本发明提高了由半导体材料和烧结的组合物材料的区域熔化产生的单晶的质量,决定了工厂的技术能力,提高了空间站上材料的区域熔化过程的效率系数和安全性。

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