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DRAM FABRICATED ON A SILICON-ON-INSULATOR (SOI) SUBSTRATE HAVING BI-LEVEL DIGIT LINES
DRAM FABRICATED ON A SILICON-ON-INSULATOR (SOI) SUBSTRATE HAVING BI-LEVEL DIGIT LINES
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机译:DRAM绝缘硅(SOI)基板上具有双水平数字化生产线
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DRAM FABRICATED ON A SILICON-ON-INSULATOR (SOD SUBSTRATE HAVINGBI-LEVEL DIGIT LINES Abstract A DRAM having bi-level digit lines is fabricated on a silicon-on-insulator "SOI" substrate (12).More specifically, the digit lines of each complimentary digit line pair are positioned on opposite sides of the SOI substrate. In one embodiment, digit lines are formed between memory cell capacitors (67,68), and in a second embodiment, digit lines are formed above the capacitors.Fig. 8
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