EPITAXIAL SILICON GERMANIUM FOR REDUCED CONTACT RESISTANCE IN FIELD-EFFECT TRANSISTORS

摘要

A method for selectively relieving channel stress for n-channel transistorswith recessed, epitaxial SiGe source and drain regions is described. This increasesthe electron mobility for the n-channel transistors without affecting the strainin p-channel transistors. The SiGe provides lower resistance when a silicideis formed.