首页> 外国专利> HIGHLY ADAPTABLE HETEROGENEOUS POWER AMPLIFIER IC MICRO-SYSTEMS USING FLIP CHIP AND MICROELECTROMECHANICAL TECHNOLOGIES ON LOW LOSS SUBSTRATES

HIGHLY ADAPTABLE HETEROGENEOUS POWER AMPLIFIER IC MICRO-SYSTEMS USING FLIP CHIP AND MICROELECTROMECHANICAL TECHNOLOGIES ON LOW LOSS SUBSTRATES

机译:在低损耗基底上使用倒装芯片和微机电技术的高度自适应的异构功率放大器IC微系统

摘要

A first MEM (329) having first and second contact is mounted on a substrate. A PA power cell is thermally connected to the substrate using a thermal bump. The power cell has first and second power cell bumps as pathways for I/O functions. A first insulator (319) is mounted on substrate supporting a second MEM (327), having first and second connections, located on a bottom surface. This first conductive via (313) traverses the first insulator and connect the first connection from the second MEM to a first conductor connected to the first power cell bump . The second conductor (335) is connected to a second conductive via (307), which traverses a second insulator. The second conductive via is connected to a first metal member. The second conductive via is connected to a first metal member (305) formed over the upper surface of the second insulator and connected to a first input to the first MEM switch. A second metal member (303) is connected to the second contact of the first MEM switch.
机译:具有第一和第二触点的第一MEM(329)被安装在基板上。使用热凸点将PA功率单元热连接到基板。功率单元具有第一和第二功率单元凸块,作为I / O功能的路径。第一绝缘体(319)安装在支撑第二MEM(327)的基板上,该第二MEM具有位于底部表面上的第一和第二连接。该第一导电通孔(313)横穿第一绝缘体并且将第一连接从第二MEM连接到连接到第一功率单元凸块的第一导体。第二导体(335)连接到横穿第二绝缘体的第二导电通孔(307)。第二导电通孔连接到第一金属构件。第二导电通路连接到形成在第二绝缘体的上表面上方的第一金属构件(305),并且连接到第一MEM开关的第一输入。第二金属构件(303)连接到第一MEM开关的第二触点。

著录项

  • 公开/公告号EP1561243B1

    专利类型

  • 公开/公告日2007-12-05

    原文格式PDF

  • 申请/专利权人 RAYTHEON CO;

    申请/专利号EP20030786761

  • 申请日2003-11-13

  • 分类号H01L23/66;H05K1/18;

  • 国家 EP

  • 入库时间 2022-08-21 20:00:49

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