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SINGLE WAFER THERMAL CVD PROCESSES FOR HEMISPHERICAL GRAINED SILICON AND NANO-CRYSTALLINE GRAIN-SIZED POLYSILICON
SINGLE WAFER THERMAL CVD PROCESSES FOR HEMISPHERICAL GRAINED SILICON AND NANO-CRYSTALLINE GRAIN-SIZED POLYSILICON
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机译:半球形晶粒硅和纳米晶晶粒尺寸多晶硅的单晶片热CVD工艺
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摘要
Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
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