IMPROVED QUANTUM WELL DESIGN FOR A COHERENT, SINGLE-PHOTON DETECTOR WITH SPIN RESONANT TRANSISTOR

摘要

A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has first and second electrodes formed thereon, the first electrode forming an isolation electrode for defining, when negatively energized, an extent of the quantum well in the body and the second electrode being positioned above a location where an electrostatic quantum dot is defined in said quantum well in response to positive energization of the second electrode. The quantum well occurs in three layers of material. An effective, weighted g-factor for the detector is sufficiently close to zero that the Zeeman energy is less than a linewidth, expressed in terms of energy, of photons to be detected by the detector.