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TECHNIQUE FOR IMPROVED DAMAGE CONTROL IN A PLASMA DOPING (PLAD) ION IMPLANTATION
TECHNIQUE FOR IMPROVED DAMAGE CONTROL IN A PLASMA DOPING (PLAD) ION IMPLANTATION
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机译:等离子体掺杂(PLAD)离子注入中改进的损伤控制技术
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摘要
A technique for improved damage control in plasma doping (PLAD) ion implantation is disclosed. According to a particular exemplary embodiment, the technique may be realized as a method for improved damage control in plasma doping (PLAD) ion implantation. The method may comprise placing a wafer on a platen in a chamber. The method may also comprise generating a plasma in the chamber. The method may additionally comprise implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0° C during ion implantation, and wherein a dose rate associated with the portion of ions is at least 1 x 10SUP13/SUP atoms/cmSUP2/SUP/second.
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机译:公开了一种用于改善等离子体掺杂(PLAD)离子注入中的损伤控制的技术。根据特定示例性实施例,该技术可以被实现为用于改善等离子体掺杂(PLAD)离子注入中的损伤控制的方法。该方法可以包括将晶片放置在腔室内的压板上。该方法还可以包括在腔室中产生等离子体。该方法可以另外包括将由等离子体产生的至少一部分离子注入到晶片中,其中在离子注入期间将晶片冷却到不高于0℃的温度,并且其中与该离子的该部分相关的剂量率是至少1 x 10 13 SUP>原子/ cm 2 SUP> /秒。
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