3C-SIC NANOWHISKER SYNTHESIZING METHOD AND 3C-SIC NANOWHISKER

摘要

A thin film (2) of a metal element is deposited on an Si substrate (1), the Si substrate (1) is placed in a plasma produced from hydrogen and a hydrogen carbide at a predetermined substrate temperature for a certain time in a plasma CVD apparatus to form 3C-SiC nanowhiskers. Si atoms in the Si substrate (1) and C atoms in the plasma dissolve in metal liquid particles (3) to a supersaturated concentration, 3C-SiC nanowhiskers (4) are grown on the metal liquid particles (3). The surface of the 3C-SiC nanowhiskers is ended with H atoms to maintain the diameters at certain value. The metal liquid particles (3) at the roots of the 3C-SiC nanowhiskers absorb Si atoms in the Si substrate (1) and penetrate into the Si substrate (1). Such 3C-SiC nanowhiskers can be used as an emitting material matching the Si process.