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Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
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机译:包括薄膜电阻器的单片集成电路及其制造方法
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摘要
A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) regions, and a Faraday shield layer region (22; 22') above the gate region; and at least a first metallization layer (28) there above for electrical connection of the gate (17), source (16) and drain (15) regions through via holes filled with conductive material (29c-d). The thin film resistor (8) and the Faraday shield layer region (22; 22') are made in the same conductive layer, which is arranged below the first metallization layer (28).
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