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Bi(12)MO(20) based Photo-conductor, radiation detector, and radiation imaging panel
Bi(12)MO(20) based Photo-conductor, radiation detector, and radiation imaging panel
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机译:基于Bi(12)MO(20)的光电导体,辐射探测器和辐射成像面板
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摘要
Aphoto-conductor (2, 14) for constituting a radiation detector (1) is formed so as tobe substantially freefroma ghost and an alteration of contrast due to a decrease in sensitivity. The photo-conductor (2, 14), which is capable of forming electric charges by being exposed to radiation, contains Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. The photo-conductor (2, 14) has characteristics such that a proportion of a diffuse reflectivity at a wavelength of 450nm with respect to the diffuse reflectivity at a wavelength of 600nm is equal to at least 75%, or such that a linear absorption coefficient at a wavelength of 450nm is equal to at most 10cm-1.
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机译:形成用于构成放射线检测器(1)的光电导体(2、14),以使其基本上没有重影和由于灵敏度降低而引起的对比度变化。能够通过暴露于辐射而形成电荷的光电导体(2、14)包含Bi 12 Sub> MO 20 Sub>,其中M表示至少一个选自Ge,Si和Ti的一种元素。光电导体(2、14)具有以下特性:在450nm的波长处的漫反射率相对于在600nm的波长处的漫反射率的比例至少等于75%,或者使得线性吸收系数在450nm的波长处最大等于10cm -1 Sup>。
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