首页> 外国专利> COMPLEX OXIDE FILM AND METHOD FOR PRODUCING SAME, COMPOSITE BODY AND METHOD FOR PRODUCING SAME, DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR, PIEZOELECTRIC ELEMENT AND ELECTRONIC DEVICE

COMPLEX OXIDE FILM AND METHOD FOR PRODUCING SAME, COMPOSITE BODY AND METHOD FOR PRODUCING SAME, DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR, PIEZOELECTRIC ELEMENT AND ELECTRONIC DEVICE

机译:复合氧化物膜及其制造方法,复合体以及制造方法,介电材料,压电材料,电容器,压电元件和电子设备

摘要

The invention aims at providing a complex oxide film having a high relative dielectric constant and a high voltage resistance, whose film thickness can be arbitrarily controlled, and a manufacturing method thereof, a composite body comprising the complex oxide film and a manufacturing method thereof, a dielectric or piezoelectric material comprising the complex oxide film or composite body, a capacitor or piezoelectric element comprising the complex oxide film advantageous to improve voltage resistance, and an electronic device equipped with the same, without involving any complicated or large scale equipment. The complex oxide film can be obtained by forming a metal oxide film containing a titanium element on a substrate surface and then allowing a solution containing strontium ion to react with the metal oxide film. A capacitor including the complex oxide film as dielectric material and a piezoelectric element including it as piezoelectric material can be produced.
机译:本发明的目的在于提供可以任意控制膜厚的相对介电常数高且耐电压性高的复合氧化物膜及其制造方法,包括该复合氧化物膜的复合体及其制造方法,包括复合氧化物膜或复合体的电介质或压电材料,包括有利于提高耐电压性的复合氧化物膜的电容器或压电元件,以及配备有该复合材料的电子设备,而无需涉及任何复杂或大规模的设备。复合氧化物膜可以通过在基板表面上形成含有钛元素的金属氧化物膜,然后使含有锶离子的溶液与该金属氧化物膜反应而得到。可以制造包括复合氧化物膜作为电介质材料的电容器和包括该复合氧化物膜作为压电材料的压电元件。

著录项

  • 公开/公告号EP1978000A1

    专利类型

  • 公开/公告日2008-10-08

    原文格式PDF

  • 申请/专利权人 SHOWA DENKO K.K.;

    申请/专利号EP20060843470

  • 发明设计人 SHIRAKAWA AKIHIKO;

    申请日2006-12-27

  • 分类号C01G23;C25D11/26;H01G4/12;H01L21/822;H01L27/04;H01L41/24;

  • 国家 EP

  • 入库时间 2022-08-21 19:55:02

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