Semiconductor laser diode using change of energy band structure

摘要

A semiconductor laser diode using change of an energy band structure is provided to raise an electric barrier through a critical value changing from type 1 to type 2. A semiconductor laser diode using change of an energy band structure includes an active layer, a cladding layer, a second compound semiconductor layer, and a third compound semiconductor layer. The active layer has a structure of a quantum well. The cladding layer is contacted to one side of the active layer, and is composed of a first compound semiconductor layer. The second compound semiconductor layer is contacted to the other end of the active layer, and forms an energy step for the active layer. The third compound semiconductor layer is inserted into the second semiconductor layer, and separates the second compound semiconductor layer to have a critical point having a non-conductive band energy step of "0" with the second compound semiconductor layer.