METHOD FOR PREPARING TRIODE TYPE CARBON NANOTUBES FOR FIELD EMISSION DEVICES

摘要

A method for preparing a triode type carbon nano tube for field emission device is provided to prevent leakage current by forming an electrical insulating state between a grown carbon nano-tube and a gate electrode. An AAO(Anodic Aluminum Oxide) is grown on an Si substrate. A shadow layer is selectively deposited on the AAO. Micro-pores are partially exposed by shadowing partially the AAO. A carbon nano-tube is grown in a non-shadow space by using a thermally chemical vapor phase-synthesis method or a plasma chemical vapor phase-synthesis method. A first insulating layer is deposited on the substrate. A gate electrode layer is deposited only on the first insulating layer having the shadow layer. A second insulating layer is deposited on the gate electrode layer. The carbon nano-tube is formed by performing a selective etch process using a chemical or physical etch method.