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METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD
METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD
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机译:用化学气相沉积法制备可替代碳的高掺杂晶体硅层的方法
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摘要
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
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