MASK FOR MAKING THIN FIME TRANSISTOR, THIN FIME TRANSISTOR PLATE MADE BY THE MASK AND METHOD FOR MAKING THE THIN FIME TRANSISTOR PLATE USING THE MASK

摘要

A mask for fabricating a TFT is provided to reduce a separation interval between a source electrode and a drain electrode by forming a single slit between a source mask pattern and a drain mask pattern wherein the slit has an interval not greater than the resolution of an exposure unit. A drain mask pattern(120) blocks light to form a drain electrode. A source mask pattern(130) blocks light to form a source electrode, confronting the drain mask pattern. A light introduction blocking pattern(160) reduces the light introduced from the outside to a gap between the source mask pattern and the drain mask pattern, formed between both ends of the source mask pattern and the drain mask pattern. The drain mask pattern and the source mask pattern are separated from each other by an interval not greater than the resolution of an exposure unit. The separation interval between the drain mask pattern and the source mask pattern can have a range of 2~3 smum.