CHEMICAL-MECHANICAL POLISHING PROCESS OF AN INTERLAYER DIELECTRIC AND APPARATUS FOR COMPENSATING A STEP OF A CHEMICAL-MECHANICAL POLISHING PROCESS THEREOF

摘要

A CMP process of an interlayer dielectric is provided to improve flatness in planarizing an interlayer dielectric by compensating for a step of the edge of a wafer. A gap-fill insulation layer(12) is formed on a wafer to gap-fill a metal layer(11). A step compensating insulation layer(13) is formed on the edge of the wafer to compensate for a step. An interlayer dielectric is formed on the wafer. A CMP process is performed on the wafer. The step compensating insulation layer can have a thickness of 60-100 percent of the metal layer.