首页> 外国专利> AGENT FOR RENDERING HALOGEN-CONTAINING GAS HARMLESS, AND METHOD OF RENDERING HALOGEN-CONTAINING GAS HARMLESS USING SAME

AGENT FOR RENDERING HALOGEN-CONTAINING GAS HARMLESS, AND METHOD OF RENDERING HALOGEN-CONTAINING GAS HARMLESS USING SAME

机译:渲染含卤素气体危害的代理商,以及使用相同方法渲染含卤素气体危害的方法

摘要

An agent for rendering a halogen-based gas harmless and a method of rendering a halogen-based gas harmless using the agent are provided, wherein the agent renders exhaust gases harmless, the exhaust gases comprising a halogen-based gas exhausted from an etching process, a CVD(chemical vapor deposition) process, and a cleaning process in the fabrication of a semiconductor device or a liquid crystal device. An agent for rendering a halogen-based gas harmless comprises a faujasite zeolite having a SiO2/Al2O3 mole ratio of 2.0 to 2.3 and contains at least one cation of alkali metal cations and alkaline earth metal cations. The agent is a molded body comprising a binder in the amount of 10% or less. The one cation is selected from the group consisting of Na and K. A method of rendering a halogen-based gas harmless comprises contacting a halogen-based gas with the agent for rendering the halogen-based gas harmless.
机译:提供了一种使卤素基气体无害的试剂和使用该试剂使卤素基气体无害的方法,其中该试剂使废气无害,所述废气包括从蚀刻工艺中排出的卤素基气体,在半导体器件或液晶器件的制造中的CVD(化学气相沉积)工艺和清洁工艺。用于使卤素类气体无害的试剂包括SiO 2 / Al 2 O 3摩尔比为2.0至2.3的八面沸石,并且包含碱金属阳离子和碱土金属阳离子中的至少一种阳离子。该试剂是包含10%或更少的粘合剂的成型体。一种阳离子选自Na和K。使卤素基气体无害的方法包括使卤素基气体与使卤素基气体无害的试剂接触。

著录项

  • 公开/公告号KR20080077924A

    专利类型

  • 公开/公告日2008-08-26

    原文格式PDF

  • 申请/专利权人 TOSOH CORPORATION;

    申请/专利号KR20080015430

  • 发明设计人 HIRANO SHIGERU;

    申请日2008-02-20

  • 分类号B01J20/16;B01J20/18;B01D53/04;B01D53/68;

  • 国家 KR

  • 入库时间 2022-08-21 19:53:08

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