METHOD FOR FABRICATING THE RECESSED GATE USING CELL-HALLO IMPLANTATION

摘要

In cell threshold voltage control after first cell-ion implanting ring of light process, a kind of method is arranged to prevent the variation of a cell threshold voltage using a recess gate of the one unit-ion implanting ring of light for manufacturing by executing second cell-ion implanting ring of light process. A part of semi-conductive substrate (300) is etched to form a recess portion ditch, determines a dotted line contact area (304) and a storage node contact region (306). The gate stack (332) to overlap each other with recess portion ditch is formed. The first mask layer pattern formation being open with one is in gate stack. Opening exposes a surface of semiconductor substrate corresponding with bit line contact area. One first cell-ion implanting ring of light will carry out implant impurity as an ion implanting mask by using the first mask layer model and enter bit line contact area. First mask layer model is removed. One gate spacer is formed in one side of gate stack. The second mask layer pattern formation with an opening is in gate stack. Opening exposes a surface of semiconductor substrate corresponding with bit line contact area. One second cell-ion implanting ring of light will carry out implant impurity, and by using the second mask layer model as an ion implantation mask, gas diffusion velocity, which is faster than, enters bit line contact area for the impurity of the first cell-ion implanting ring of light. Second mask layer model is removed.