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METHOD OF FAILURE ANALYSIS ON DEFECTIVE SEMICONDUCTOR DEVICE AND FAILURE ANALYSIS SYSTEM

机译:缺陷半导体器件的故障分析方法及故障分析系统

摘要

A method of failure analysis on a defective semiconductor device and failure analysis system are provided to grasp the cause of failure during a semiconductor test by making the electric characteristic with respect to the failure into the database. A failure analysis system(110) on a defective semiconductor device includes a cell array on which a plurality of cells having different failures are formed; a test device for digitalizing the measured electric characteristic by measuring the electric characteristic of plural cells; a database storage(120) for storing the digitized electric characteristic of each cell. The plurality of cells are composed of SRAMs.
机译:提供了一种对有缺陷的半导体器件进行故障分析的方法和故障分析系统,以通过将关于故障的电特性输入数据库来掌握半导体测试期间的故障原因。缺陷半导体器件上的故障分析系统(110)包括:单元阵列,其上形成具有不同故障的多个单元;通过测量多个单元的电特性来数字化所测电特性的测试装置;数据库存储器(120),用于存储每个单元的数字化电特性。多个单元由SRAM组成。

著录项

  • 公开/公告号KR20080096233A

    专利类型

  • 公开/公告日2008-10-30

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20070041422

  • 发明设计人 LEE JONG HYUN;LEE SOO YONG;

    申请日2007-04-27

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:50

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