PHASE-CHANGE MEMORY DEVICE HAVING PHASE CHANGE MATERIAL PATTERN SHARED BETWEEN ADJACENT CELLS AND ELECTRONIC PRODUCT INCLUDING THE PHASE-CHANGE MEMORY

摘要

A phase-change memory device having a phase change material pattern shared between adjacent cells and an electronic product including the same are provided to minimize electrical interference between phase change memory cells by arranging the phase change material pattern in an oblique direction with respect to columns and rows of lower electrodes. A plurality of lower electrodes(BE) are arranged in a matrix. A plurality of phase change material patterns are connected electrically to the lower electrodes. Each of the phase change material patterns is commonly connected to two or more lower electrodes which are adjacent to each other in an oblique direction with respect to columns and rows of the lower electrodes. A gap, between the adjacent lower electrodes of the lower electrodes connected electrically to each of the phase change material patterns, is larger than a gap between the lower electrodes arranged in each of rows and a gap between the lower electrodes arranged in each column.