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SEMICONDUCTOR MEMORY DEVICE HAVING INPUT LATENCY CONTROL CIRCUIT AND METHOD OF CONTROLLING INPUT LATENCY OF THE SAME
SEMICONDUCTOR MEMORY DEVICE HAVING INPUT LATENCY CONTROL CIRCUIT AND METHOD OF CONTROLLING INPUT LATENCY OF THE SAME
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机译:具有输入潜伏期控制电路的半导体存储器及其控制输入潜伏期的方法
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摘要
Wave latency control input method for a semiconductor memory device and a semiconductor memory device including an input latency control circuit that is controlled in a pipelined manner is disclosed. The semiconductor memory device includes a clock buffer, the command decoder, and the input latency control circuit. Latency input control circuit generates an internal clock signal, the write command signal, and a write latency signal, the address signal wave gating in a pipelined manner, and column address signals, bank address signals based on. A semiconductor memory device having an input latency control circuit can increase the margin between the can reduce the number of the flip-flop input control signals and valid address signals needed for latency control, a semiconductor integrated circuit low power consumption to take up less area when implemented.
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