首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE HAVING INPUT LATENCY CONTROL CIRCUIT AND METHOD OF CONTROLLING INPUT LATENCY OF THE SAME

SEMICONDUCTOR MEMORY DEVICE HAVING INPUT LATENCY CONTROL CIRCUIT AND METHOD OF CONTROLLING INPUT LATENCY OF THE SAME

机译:具有输入潜伏期控制电路的半导体存储器及其控制输入潜伏期的方法

摘要

Wave latency control input method for a semiconductor memory device and a semiconductor memory device including an input latency control circuit that is controlled in a pipelined manner is disclosed. The semiconductor memory device includes a clock buffer, the command decoder, and the input latency control circuit. Latency input control circuit generates an internal clock signal, the write command signal, and a write latency signal, the address signal wave gating in a pipelined manner, and column address signals, bank address signals based on. A semiconductor memory device having an input latency control circuit can increase the margin between the can reduce the number of the flip-flop input control signals and valid address signals needed for latency control, a semiconductor integrated circuit low power consumption to take up less area when implemented.
机译:公开了一种用于半导体存储器件的波等待时间控制输入方法以及包括以流水线方式控制的输入等待时间控制电路的半导体存储设备。该半导体存储器件包括时钟缓冲器,命令解码器和输入等待时间控制电路。延迟输入控制电路生成内部时钟信号,写命令信号和写延迟信号,以流水线方式选通的地址信号波,以及基于列地址信号,存储体地址信号的列。具有输入等待时间控制电路的半导体存储器件可以增加之间的余量,可以减少触发器输入控制信号和等待时间控制所需的有效地址信号的数量,半导体集成电路的功耗低,占用的面积较小。已实施。

著录项

  • 公开/公告号KR100807236B1

    专利类型

  • 公开/公告日2008-02-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060092619

  • 发明设计人 김성훈;김경호;김정열;장성진;

    申请日2006-09-25

  • 分类号G11C7/20;G11C8/18;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:29

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