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SUPPORTING APPARATUS FOR SUPPORTING A GROWING SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL, AND PROCESS FOR PRODUCING A SINGLE CRYSTAL
SUPPORTING APPARATUS FOR SUPPORTING A GROWING SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL, AND PROCESS FOR PRODUCING A SINGLE CRYSTAL
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机译:用于支撑半导体材料的单晶生长的支撑装置以及用于制造单晶的方法
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摘要
An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.
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