THE FABRICATION PROCESS THE THIN FILM TRANSISTOR HAVING MULTILAYER GATE METAL ON PLASTIC SUBSTRATE AND ACTIVE MATRIX DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR

摘要

A method for manufacturing a thin film transistor of multi-layered structure and an active matrix display device including the same are provided to lessen a leakage current of a TFT device by forming a gate metal layer with an etched corner area. A buffer insulating layer(120) is formed on a plastic substrate(110). A silicon layer is formed on the buffer insulating layer, and then the silicon layer is patterned to form an active layer(130). A gate insulating layer is formed on the active layer, and then plural gate metal layers(150) are deposited on the gate insulating layer. The plural gate metal layers are patterned, and then a corner area of the lowermost gate metal layer formed on the gate insulating is etched.