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MIRROR CHAMFERED WAFER, MIRROR CHAMFERING POLISHING CLOTH, AND MIRROR CHAMFERING POLISHING MACHINE AND METHOD
MIRROR CHAMFERED WAFER, MIRROR CHAMFERING POLISHING CLOTH, AND MIRROR CHAMFERING POLISHING MACHINE AND METHOD
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机译:镜面倒角晶圆,镜面倒角抛光布以及镜面倒角抛光机和方法
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摘要
The present invention provides a mirror-chamfering wafers with reduced non-uniform wafer periphery, the wafer processing abrasive cloth, a polishing apparatus and the polishing method. The wafer is provided by regulating the width-over policy of the single flat mirror or less 400㎛. Further, the in the polishing cloth, the Asker C The single-layer structure with at least two-layer multi-layer structure bonded to the foam layer, or only the polishing cloth layer of a hardness of 65 or more polishing cloth layer and the Asker C hardness of 40 or less. Further, the polishing apparatus, a polishing method, the polishing on a rotary drum attached to the cloth, and while supplying the abrasive liquid provides to fulfill the mirror chamfering the wafer rotating at a rotational device in contact Sikkim and the contact portion at a predetermined angle .
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机译:本发明提供了具有减少的晶片不均匀周边的镜面倒角晶片,晶片处理研磨布,抛光设备和抛光方法。通过调节单个平面镜或小于400㎛的宽度策略来提供晶片。此外,在抛光布中,Asker C具有至少两层多层结构的单层结构结合至泡沫层,或仅具有65或更高硬度的抛光布层与抛光层粘合在一起。 Asker C硬度为40以下。此外,抛光设备,抛光方法,在附接到布料的旋转鼓上的抛光以及在供给研磨液的同时提供了使在与锡金接触的旋转装置和接触部处以预定的角度旋转的晶片倒角的镜面倒角。角度。
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