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Flash memory device capable of improving a characteristic of a data retention

机译:能够改善数据保留特性的闪存设备

摘要

The present invention relates to a flash memory device that can improve the data retention characteristic , the height of the floating gate lower than the height of a conventional floating gate or configured to overlap the floating gate and device separation interval smaller than the width of a conventional floating gate and the device isolation width and the overlap interval by reducing the surface area of the floating gate that is affected by the mobile ions , flash it is possible to improve the data retention (data retention) properties in the memory cell .
机译:闪存器件技术领域本发明涉及一种闪存器件,其可以改善数据保持特性,浮栅的高度低于常规浮栅的高度或者被配置为与浮栅重叠并且器件间隔小于常规的宽度。浮栅和器件的隔离宽度和重叠间隔通过减小浮栅的表面积而受到移动离子的影响,闪存有可能改善存储单元中的数据保留(data保持)特性。

著录项

  • 公开/公告号KR100833427B1

    专利类型

  • 公开/公告日2008-05-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060053417

  • 发明设计人 양해종;

    申请日2006-06-14

  • 分类号H01L27/115;H01L21/8247;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:04

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