首页> 外国专利> A METHOD OF PERFORMING RESIST PROCESS CALIBRATION/OPTIMIZATION AND DOE OPTIMIZATION FOR PROVIDING OPE MATCHING BETWEEN DIFFERENT LITHOGRAPHY SYSTEMS AND A COMPUTER-READABLE RECORDING MEDIUM FOR RECORDING A COMPUTER PROGRAM INCLUDING THEREOF

A METHOD OF PERFORMING RESIST PROCESS CALIBRATION/OPTIMIZATION AND DOE OPTIMIZATION FOR PROVIDING OPE MATCHING BETWEEN DIFFERENT LITHOGRAPHY SYSTEMS AND A COMPUTER-READABLE RECORDING MEDIUM FOR RECORDING A COMPUTER PROGRAM INCLUDING THEREOF

机译:在不同光刻系统和计算机可读记录介质之间进行匹配操作以进行电阻过程校准/优化和DOE优化的方法,以记录包括该方法的计算机程序

摘要

The method of optimizing a process for use with a plurality of lithography systems are disclosed. The method includes the steps of: using a lithographic system of claim 1 (a) determining a calibrated resist model for a given process and a target pattern; (B) utilizing said given process, comprising the step of selecting a lithography system of the second to be used to image the target pattern, a lithography system of the second is to be configured with one of a plurality of diffractive optical elements number, and each of the plurality of diffractive optical elements, and having a variable parameter that corresponds to optimize the performance of the given diffractive optical element; (C) the imaging performance of the lithography system of the second selected one of said plurality of diffractive optical elements, and the use to the selected one of the plurality of diffractive optical elements, said calibrated resist model and the target pattern the step of simulation; And (d) by executing a genetic algorithm which identifies the values ​​of the plurality of diffractive optical elements of the selected raw parameters of optimizing the imaging of the target pattern, optimizing the imaging performance of what the selected one of the plurality of diffractive optical elements and a step of.
机译:公开了优化与多个光刻系统一起使用的工艺的方法。该方法包括以下步骤:使用权利要求1的光刻系统(a)为给定的过程和目标图案确定校准的抗蚀剂模型; (B)利用所述给定过程,包括选择要用于对目标图案成像的第二光刻系统的步骤,第二光刻系统将配置有多个衍射光学元件编号之一,以及多个衍射光学元件中的每一个,并且具有可变参数,该可变参数对应于优化给定衍射光学元件的性能; (C)所述多个衍射光学元件中的第二个选择的光刻系统的光刻系统的成像性能,以及向所述多个衍射光学元件中的一个选择的使用所述校准的抗蚀剂模型和目标图案的模拟步骤;并且(d)通过执行遗传算法来识别所选择的原始参数的多个衍射光学元件的值以优化目标图案的成像,从而优化所选择的多个衍射中的一个的成像性能光学元件和步骤。

著录项

  • 公开/公告号KR100836125B1

    专利类型

  • 公开/公告日2008-06-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050078669

  • 发明设计人 첸 장 풍;리브헨 아르민;박상봉;

    申请日2005-08-26

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:01

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