METHOD FOR IMPROVING ELECTRICAL CHARACTER OF BRT ELEMENT AND APPARATUS THEREOF

摘要

A method and an apparatus for improving an electrical characteristic of a BRT device are provided to manufacture the BRT device having a high performance switching by irradiating an optimized electron beam on the BRT device. An electron beam is irradiated on a BRT(Base Resistance controlled Thyristor) device to extract a first specific condition value of the electron beam which shortens a lifespan of minor carrier. The electron beam of the extracted first specific condition value is irradiated on other BRT device. The other BRT device is subjected to a thermal annealing process to extract a second specific condition value which increases a threshold voltage. Another BRT device is subjected to the thermal annealing process of the extracted specific condition value.