METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING DUAL DAMASCENE PROCESS AND METHOD FOR MANUFACTURING ARTICLE HAVING COMMUNICATING HOLE

摘要

The present invention is to provide a method of manufacturing a semiconductor device which can easily control the length direction of the wiring grooves and via-hole depth. According to the invention, the preparation of the first member having the insulating film on the substrate, and forming an insulating layer on the film of the first. And, routing the imprint layer on the groove and the mold having the pattern corresponding to the connection holes of the first, to form a second insulating film having a connection hole of the wiring groove to the first. Then, the connection holes of the second to that of the second insulating film as a mask to etch the insulating film of the first connected to the connection holes of the first characterized in that formed on the insulating film of the first.