METHOD OF MANUFACTURING P-TYPE CIS AND N-TYPE CIS THIN FILMS

摘要

A method for fabricating p-type and n-type CIS(CuInSe2) thin films is provided to form a CIS thin film with a uniform structure and a small thickness by easily fabricating a CIS thin film having an n-type or p-type semiconductor characteristic without varying a band gap while making In2Se3 and Cu2Se3 differ from each other in a mole fraction. First alloy including In and Se and second alloy including Cu and Se are prepared in a thermal deposition apparatus including a tungsten boat(S10). A substrate is installed in the thermal deposition apparatus(S20). The substrate is heated to a first temperature and the temperature of the substrate is maintained at the first temperature(S30). The first alloy is evaporated to form a first thin film on the substrate maintained at the first temperature(S40). The substrate is heated to a second temperature and the temperature of the substrate is maintained at the second temperature(S50). The second alloy is evaporated to form a CIS thin film on the substrate maintained at the second temperature(S60). While the substrate is cooled, the first alloy can be evaporated(S70).