A method for manufacturing a color controlled sapphire is provided to cause a change of optical band gaps by using an ion implantation method. An evaporation process is performed by sputtering or heating one more or two more metal materials selected from a group including iron, cobalt, nickel, scandium, titanium, vanadium, manganese, copper, zinc, yttrium, zirconium, niobium, molybdenum, tellurium, ruthenium, rhodium, palladium, and cadmium. An evaporated state of the metal materials is changed into the plasma state of the metal materials by applying an electron beam or a radio frequency to the metal materials. The plasma state of the materials are accelerated and implanted into a surface of sapphire. A thermal process for the sapphire is performed at oxygen atmosphere or in the air.
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