THE NONVOLATILE DRAM HAVING CAPACITORLESS DRAM CHARACTERISTIC AND NONVOLATILE MEMORY CHARACTERISTIC BY RESISTANCE SWITCHING MATERIAL

摘要

A non-volatile dram having a capacitorless dram characteristic and a non-volatile memory characteristic by a resistance switching material are provided to increase the degree of integration by removing a capacitor. A hole envelopment layer(110) is formed on a semiconductor substrate(100). A floating body(120) is formed on the hole envelopment layer. A resistance switching material layer(150) is formed on the floating body. A gate(160) is formed on the resistance switching material layer. A source and a drain are formed between the floating bodies on the hole envelopment layer. The hole envelopment layer is formed with an insulator. The hole envelopment layer is an ion implantation layer. The ion implantation layer is formed by implanting P type impurity ions into the semiconductor substrate.