METHOD reactive ion etching in microtechnology hidden channels in silicon

摘要

1. A method of reactive ion etching in microtechnology covert channels in silicon, comprising forming a reactor based plasma reactive ion etching SF, increase flow SF, increasing the substrate temperature above 25 ° C, characterized in that the increase of the plasma density in a reactor using an inductively source coupled plasma (ICP) .2. A method according to claim 1, characterized in that the increase in plasma density in the reactor is carried out in the range of 10 ÷ 10 cm.