Heavy-duty MONOCRYSTALS CVC-diamond, and three-dimensional growth

摘要

1. A single crystal diamond grown using microwave plasma-induced chemical vapor deposition that has a toughness of at least about 30 MPa m.2. A single crystal diamond according to claim 1, the strength of which is at least about 35 MPa m.3. A single crystal diamond according to claim 2, the strength of which is at least about 40 MPa M.4. A single crystal diamond according to claim 1, the hardness of which varies from about 100 to about 160 GPa.5. A method of growing superalloy single crystal diamond comprising sebyai) placing the crystal nucleus of diamond heat sink holder made of a material having a high melting point and high thermal conductivity to minimize temperature gradients in the direction from edge to edge surface of the diamond growth; ii) temperature control surface of the diamond growth so that the temperature of the growing diamond crystals is in the range of about 1050-1200 ° C; and iii) growing single crystal diamond by means of the induced microwave plasma chemical vapor deposition on the surface growth of diamond in a deposition chamber in which the atmosphere is characterized by a nitrogen relation to methane of about 4% N / CH, iv) carrying out annealing of single crystal diamond such that the annealed single crystal of diamond has a strength of at least about 30 MPa m.6. A method according to claim 5, wherein iv) comprises step of annealing the single crystal diamond at pressures in excess of from about 5 to about 7 GPa and temperatures of from about 2000 ° C to about 2700 ° C so that the hardness is from about 100 to about 160 GPa. 7. A method according to claim 5, wherein single crystal diamond prior to annealing is substantially