首页> 外国专利> CHARGE READING DEVICE (VARIANTS) AND MEMORIZING DEVICE WITH MATRIX ADDRESSING, FITTED WITH SUCH A READING DEVICE

CHARGE READING DEVICE (VARIANTS) AND MEMORIZING DEVICE WITH MATRIX ADDRESSING, FITTED WITH SUCH A READING DEVICE

机译:带矩阵地址的收费读设备(变体)和存储设备,配有这种读设备

摘要

FIELD: charge reading device and energy-independent memorizing device with passive matrix addressing.;SUBSTANCE: charge reading device contains two charge support means, two pseudo-differential support reading amplifiers (RSA1; RSA2) and a pseudo-differential reading amplifier (SA). Another variant of the device is meant for reading charges from a set of means (701) for charge storage and contains at least two pairs of charge supporting means, two pseudo-differential support reading amplifiers (RSA1; RSA2) and at least two pseudo-differential reading amplifiers (SA). Energy independent memorizing device with passive matrix addressing contains dielectric memorizing material, having hysteresis and capable of electrical polarization, and aforementioned system of reading amplifiers.;EFFECT: improved charge balancing, output signal control, ensured automatic shift in cophased mode, automatic correction of zero level shift.;3 cl, 10 dwg
机译:领域:电荷读取设备包括两个电荷支持装置,两个伪差分支持读取放大器(RSA1; RSA2)和伪差分读取放大器(SA) 。该设备的另一种变体旨在从一组用于存储电荷的装置(701)读取电荷,并包含至少两对电荷支持装置,两个伪差分支持读取放大器(RSA1; RSA2)和至少两个伪差分支持读取放大器。差分读取放大器(SA)。具有无源矩阵寻址功能的独立于能源的存储设备包含介电存储材料,具有磁滞能力和极化能力,以及上述读取放大器系统。效果:改进的电荷平衡,输出信号控制,确保在同相模式下自动移位,自动校正零水平位移。; 3 cl,10 dwg

著录项

  • 公开/公告号RU2311695C2

    专利类型

  • 公开/公告日2007-11-27

    原文格式PDF

  • 申请/专利权人 TIN FILM EHLEKTRONIKS ASA;

    申请/专利号RU20050131193

  • 发明设计人 LEJSTAD GEJRR I.;SHVEJKERT ROBERT;

    申请日2004-03-25

  • 分类号G11C7/06;G11C8/02;

  • 国家 RU

  • 入库时间 2022-08-21 19:50:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号