Method for manufacturing of a current sensor of the microsystem technology

摘要

Method for manufacturing of a current sensor of the microsystem technology,with the steps, that– the current conductors (1), which in accordance with the permissible current carrying capacity, a reduction in cross section at the point of measurement and a smallest possible distance from one another, in combination with a surrounding frame (1a) are made;– the current conductors (1) then with a plastic casing (2) are provided, wherein the plastic sheathing at the same time serves as insulation and conductor fixing;– subsequently, the frame (1a) is separated off;– the with the plastic envelope (2) current conductor (1) provided on a ceramic plate (4) are arranged and, owing to the embodiment of the parts, the current conductors (1) in the region of the measurement point in a cut-out of the ceramic plate 4 are arranged, wherein the one side of the ceramic plate (4) by means of the plastic envelope (2) is covered and on the opposite side of the ceramic plate (4) of the sensor (3) in the flip chip assembly - - and the components (5) of the switched-mode power supply are arranged.