Lacquer contamination reducing method, involves forming lacquer mask, which unseals area of deformation induced layer, over layer to cover one transistor, and removing unsealed area of layer from area over another transistor

摘要

The method involves forming a deformation induced layer over two transistors (110,120). A plasma conditioning is implemented at the layer for compressing its surface. A lacquer mask is formed over the layer with the compressed surface to cover one of the transistors, where the lacquer mask unseals the area of the layer. The unsealed area of the layer is removed from an area over the other transistor. The plasma conditioning is implemented in oxidized surroundings.