A method of forming a semiconductor structure, which is a field effect - transistor with the pretensioned channel region comprises

摘要

A method for forming a semiconductor structure comprises a providing a half conductor ubs retentate, which is a first transistor elements and a second transistor cell comprises. The first transistor element comprises at least a first amorphous area and the second transistor element comprises at least a second amorphous field. A power layer is formed by means of the first transistor cell. The power layer covers the second transistor element not. A first heat treatment is carried out. The first heat treatment is designed for this purpose, the first amorphous area and the second amorphous field to recrystallize. After the first heat treatment, a second thermal treatment is carried out. The power layer remains during the second heat treatment on the semiconductor substrate.