Illumination optics for the euv microlithography projection - -, an illumination system with such a lens system, a projection exposure system with such a lighting system, method for producing a microstructured component as well as microstructured component manufactured by the method

摘要

A projection exposure apparatus for the euv microlithography projection - - has, besides a projection lens system for imaging an illumination field in a reticle plane in an image field in an image plane a euv - light source as well as a illumination optics for the illumination of the illumination field. The optical lighting system has a field facets - mirror with a plurality of field facets to generate secondary light sources, wherein the field facets each partial bundles are associated with the euv - radiation. Furthermore, the illumination optics a pupil facets - mirror at the location of the field facets - mirror from the secondary light sources generated with a plurality of pupil facets which, via the associated field facets are acted upon with euv - radiation. The pupil facets - mirror is part of an optical device, which the field facets - mirror in the reticle plane. The field facets - mirror is in the subunits (50, 51), which in turn - groups of facets (19, 26) each having at least one field facet (11) have. A changing apparatus (56) is, for the replacement of at least one of the subunits (50, 51) of the field facets - mirror against at least one change - subunit (57, 58) is provided. The result is an illumination optics of the projection exposure system, in which a euv is possible with little structural outlay.