Solid electrolyte memory device i.e. conductive bridging RAM device, manufacturing method, involves introducing metallic material, which reduces solubility and/or mobility of ions i.e. silver ions, into electrolyte intermediate cell areas

摘要

The method involves producing a layered composite with electrode layers and a solid electrolyte layer, which is located between the electrode layers. Solid electrolyte cell areas of the solid electrolyte layer are located between electrodes (1, 2) of the electrode layers. Solid electrolyte-intermediate cell areas are located between the solid electrolyte cell areas. A metallic material, which reduces solubility and/or mobility of mobile ions i.e. silver ions, is introduced into the solid electrolyte intermediate cell areas by an ion implantation process at a room temperature. An independent claim is also included for a solid electrolyte memory device comprising solid electrolyte memory cells.