A process for reducing and homogenization of the thickness of a semiconductor layer, which is located on the surface of an electrically insulating material is

摘要

The object of the invention is a method for reducing and homogenization of the thickness of a semiconductor layer, which is located on the surface of an electrically insulating material is located, wherein an etching agent on the surface of the semiconductor layer acts, and whose redox potential in a function of the material and the desired final thickness of the semiconductor layer is set so that the by the etchant on the surface of the semiconductor layer per unit time of the material is effected with decreasing thickness of the semiconductor layer becomes less, and in the case of the desired final thickness only more 0 to 10% of the thickness per second, and wherein the process without the action of light or the application of an external electrical voltage is carried out.