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Silicon disk, for use in electronic components, has a zone of rotational symmetry with a low bulk micro defect density

机译:用于电子组件的硅盘具有旋转对称区,且体缺陷缺陷密度低

摘要

The silicon disk, cut from a single crystal, has a zone with rotational symmetry of at least 80% of its radius with agglomerates of crystal lattice empty spaces of at least 30 nm in a maximum density of 6-10 3 cm 3 and of 10-30 nm in a density of 1-10 5 cm - 3 to 3-10 7 cm - 3. The oxidation stacking fault (OSF) nuclei have a density of 0-10 cm - 2 with an internal mean bulk micro defect (BMD) density of 5-10 8 cm - 3 to 5-10 9 cm - 3. The disk has a front layer free of BMD.
机译:从单晶切割出的硅片具有一个旋转对称性至少为其半径的80%的区域,其晶格空空间的聚集体至少为30 nm,最大密度为6-10 3> cm 3>,并且10-30 nm的密度为1-10 5> cm-> 3>到3-10 7> cm-> 3>。氧化堆叠缺陷(OSF)核的密度为0-10 cm-> 2>,内部平均体微缺陷(BMD)密度为5-10 8> cm-> 3>到5-10 9> cm- > 3>。磁盘的前层没有BMD。

著录项

  • 公开/公告号DE102007027111A1

    专利类型

  • 公开/公告日2008-04-10

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号DE20071027111

  • 申请日2007-06-13

  • 分类号C30B33/02;C30B29/06;C30B15/20;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:12

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