schichtanordung from heteroverbundenen halbleiterschichten with at least one enclosed tre

摘要

Layer arrangement comprises a substrate (2), a metal film (3), a metal dichalcogenide separating layer (4) and a chalcogenide semiconductor layer (6). The crystallographic orientation of the separating layer is such that the c-axis lies perpendicularly to the metal film parallel to surface of the metal film and next to the chalcogenide semiconductor layer. An Independent claim is also included for a process for the production of a solar cell based on the layer arrangement.