a nonvolatile halbleiterspeichers adaptive reading strategy and associated device

摘要

A reading method for a nonvolatile memory device (1), wherein the gate terminals of the array memory cell (3) and of the reference memory cell (7) are supplied with a same reading voltage (VREAD) having a ramp-like pattern, so as to modify their current-conduction states in successive times, and the contents of the array memory cell (3) are determined on the basis of the modification order of the current-conduction states of the array memory cell (3) and of the reference memory cell (7). IMAGE