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techniques for recovery of data from memory cells which are affected by feldkopplung with adjacent memory cells
techniques for recovery of data from memory cells which are affected by feldkopplung with adjacent memory cells
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机译:从受费尔法普隆影响的存储单元及其相邻存储单元恢复数据的技术
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摘要
Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased. IMAGE
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