A method of bonding two substrates made of materials selected from semiconductor materials, said method using: a step of bonding the two substrates by heat treatment ,. a plasma activation of the surface to be bonded to each substrate, the surface to be bonded of a first of the two substrates being constituted by an oxide layer, characterized in that the plasma activation of said oxide layer is carried out under an oxygen-containing atmosphere, and the plasma activation of the surface to be bonded to the second substrate is carried out under an inert atmosphere.
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